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| FLM0910-25F X-Band Internally Matched FET FEATURES High Output Power: P1dB=44dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: add=30%(Typ.) Broad Band: 9.510.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 93.7 -65 to +175 175 Unit V V W Recommended Operating Condition(Case Temperature Tc=25) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=25 RG=25 Condition Limit 10 64 -11.2 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G Rth Tch Test Conditions VDS=5V , VGS=0V VDS=5V , IDS=6.92A VDS=5V , IDS=500mA IGS=-500uA VDS=10V f=9.5 - 10.5 GHz IDS=0.6Idss Zs=ZL=50 Min. -0.5 -5.0 43 6.0 - Limit Typ. 10.8 10000 -1.5 44 7.0 6.5 30 1.4 - Max. 16.2 -3.0 7.2 0.6 1.6 100 Unit A mS V V dBm dB A % dB /W Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise Channel to Case 10V X Idsr X Rth CASE STYLE: IK ESD Class 2000V G.C.P.:Gain Compression Point Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) Edition 1.3 September 2004 1 FLM0910-25F X-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER POWER DERATING CURVE 100 Total Power Dissipation [W] 46 44 VDS=10V, IDS(DC)=0.60IDSS, f=10.0GHz 70 60 50 40 30 20 10 0 24 26 28 30 32 34 36 38 40 42 Input Pow er (dBm ) Power Added Efficiency (%) 80 60 40 20 0 0 50 100 150 200 Case Temperature [o C] Output Power (dBm) 42 40 38 36 34 32 OUTPUT POWER vs. FREQUENCY VDS=10V, IDS(DC)=0.60IDSS 46 44 Pin=39dBm P1dB Pin=37dBm Pin=34dBm Output Power (dBm) 42 40 38 36 34 32 9.2 9.4 9.6 9.8 10 10.2 Frequency (GHz) 10.4 10.6 10.8 Pin=30dBm Pin=26dBm 2 FLM0910-25F X-Band Internally Matched FET S-PARAMETER +90 25 10 10.5 10 9. H z 5G 9. H z 5G 10. 5 10. 5 10.5 180 3 2 Scale for |S21| 10 0 9.5GHz Scale for |S 12| 0.2 -90 9.5GHz 10 S 11 S 22 S 12 S 21 VDS=10V , IDS=0.6Idss F req [G H z] 9 9. 1 9. 2 9. 3 9. 4 9. 5 9. 6 9. 7 9. 8 9. 9 10 10. 1 10. 2 10. 3 10. 4 10. 5 10. 6 10. 7 10. 8 10. 9 11 S 11 M AG 0. 71 0. 65 0. 59 0. 53 0. 47 0. 42 0. 39 0. 37 0. 37 0. 38 0. 40 0. 41 0. 43 0. 44 0. 44 0. 44 0. 43 0. 42 0. 40 0. 37 0. 34 S 21 ANG M AG 2. 15 2. 29 2. 40 2. 47 2. 51 2. 53 2. 56 2. 59 2. 62 2. 63 2. 64 2. 62 2. 60 2. 57 2. 53 2. 50 2. 47 2. 44 2. 43 2. 43 2. 42 S 12 ANG M AG 0. 05 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 06 0. 07 0. 07 0. 08 S 22 M AG 0. 26 0. 22 0. 21 0. 22 0. 24 0. 26 0. 29 0. 30 0. 31 0. 32 0. 32 0. 32 0. 32 0. 32 0. 33 0. 33 0. 33 0. 33 0. 32 0. 30 0. 27 ANG 15. 25 -1. 55 -17. 77 -34. 01 -49. 64 -64. 58 -79. 62 -94. 61 -109. 43 -124. 61 -140. 33 -155. 72 -172. 24 171. 03 154. 60 137. 92 120. 72 103. 61 85. 80 68. 12 50. 38 ANG -77. 71 -107. 05 -138. 65 -167. 56 168. 82 149. 54 133. 93 120. 00 107. 27 95. 51 84. 23 73. 93 63. 61 54. 33 44. 93 35. 26 25. 29 15. 68 6. 13 -2. 58 -9. 87 -88. 02 -103. 53 -120. 18 -138. 00 -156. 97 -177. 22 161. 48 138. 88 116. 07 93. 62 72. 47 52. 59 33. 84 16. 24 -0. 56 -17. 05 -33. 47 -50. 45 -68. 63 -89. 03 -113. 11 35. 09 18. 28 1. 32 -15. 34 -31. 59 -47. 33 -62. 74 -78. 13 -93. 65 -109. 43 -125. 14 -140. 95 -156. 81 -172. 15 172. 43 156. 88 141. 58 126. 23 110. 45 94. 22 77. 32 3 FLM0910-25F X-Band Internally Matched FET Package Out Line CASE STYLE : IK Unit : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM0910-25F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 5 |
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